? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 250 v v dgr t j = 25 c to 150 c; r gs = 1 m 250 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 100 a i d(rms) external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 250 a i ar t c = 25 c60a e ar t c = 25 c60mj e as t c = 25 c 2.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 p d t c = 25 c 600 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 5.5 g ds99344e(03/06) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 250 v v gs(th) v ds = v gs , i d = 4 ma 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 500 a r ds(on) v gs = 10 v, i d = 0.5 i d25 27 m pulse test, t 300 s, duty cycle d 2 % polarht tm hiperfet power mosfet g = gate d = drain s = source tab = drain n-channel enhancement mode fast intrinsic diode avalanche rated g d s to-247 (ixfh) (tab) features z fast intrinsic diode z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density ixfh 100n25p v dss = 250 v i d25 = 100 a r ds(on) 27 m t rr 200 ns
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 100n25p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 40 56 s c iss 6300 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1150 pf c rss 240 pf t d(on) 25 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 26 ns t d(off) r g = 3.3 (external) 100 ns t f 28 ns q g(on) 185 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 43 nc q gd 91 nc r thjc 0.21 c/w r thcs 0.25 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 100 a i sm repetitive 250 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a, -di/dt = 100 a/ s 200 ns q rm v r = 100 v 0.6 c i rm 10 a ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 to-247 (ixfh) outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc
? 2006 ixys all rights reserved ixfh 100n25p fig. 2. extended output characteristics @ 25 o c 0 25 50 75 100 125 150 175 200 225 250 0 2 4 6 8 101214161820 v ds - volts i d - amperes v gs = 10v 7v 6v 8v 9v fig. 3. output characteristics @ 125 o c 0 10 20 30 40 50 60 70 80 90 100 01234567 v ds - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 1. output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized i d = 100a i d = 50a v gs = 10v fig. 6. drain current vs. case tem perature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes external lead current limit fig. 5. r ds(on) norm alize d to 0.5 i d25 value vs . i d 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 0 25 50 75 100 125 150 175 200 225 250 i d - amperes r ds(on) - normalized t j = 125oc t j = 25oc v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 100n25p fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v g s - volts v ds = 125v i d = 50a i g = 10ma fig. 7. input admittance 0 25 50 75 100 125 150 44.5 55.5 66.5 77.5 8 v gs - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 0 25 50 75 100 125 150 175 200 i d - amperes g fs - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to-drain voltage 0 50 100 150 200 250 300 0.4 0.6 0.8 1 1.2 1.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 12. forw ard-bias safe operating area 1 10 100 1000 10 100 1000 v ds - volts i d - amperes 100s 1ms dc t j = 150oc t c = 25oc r ds(on) limit 10ms 25s
? 2006 ixys all rights reserved fig. 13. maxim um transient therm al resistance 0.01 0.10 1.00 1 10 100 1000 pulse width - milliseconds r (th)jc - oc/w ixfh 100n25p
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